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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2944 DESCRIPTION *With TO-3PN package *High voltage,high speed switching *High reliability *Low saturation voltage APPLICATIONS *Color & B/W TV power supply *Active power filter *Industrial use power supply *General purpose power amplifiers PINNING PIN 1 2 3 Base Collector;connected to mounting base Fig.1 simplified outline (TO-3PN) and symbol Emitter DESCRIPTION ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Base current (DC) Collector power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE 250 200 7 15 5 100 150 -55~150 UNIT V V V A A W THERMAL CHARACTERISTICS SYMBOL Rth j-C Thermal resistance junction case PARAMETER MAX 1.25 UNIT /W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL V(BR)CEO V(BR)EBO V(BR)CBO VCE(sat) VBE(sat) ICBO IEBO hFE PARAMETER Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=10mA ; IB=0 IE=0.1mA ; IC=0 IC=0.1mA ; IE=0 IC=6A ;IB=1.2A IC=6A ;IB=1.2A VCB=250V; IE=0 VEB=7V; IC=0 IC=2A ; VCE=5V 20 MIN 200 7 250 2SC2944 TYP. MAX UNIT V V V 0.8 1.2 0.1 0.1 80 V V mA mA Switching times ton ts tf Turn-on time Storage time Fall time IC=10A; IB1=-IB2=2A RL=5Pw=20s,Duty2% 0.8 1.5 0.4 s s s 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC2944 Fig.2 outline dimensions (unindicated tolerance:0.10 mm) 3 |
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